FCA20N60FS Fairchild Semiconductor, FCA20N60FS Datasheet
FCA20N60FS
Manufacturer Part Number
FCA20N60FS
Description
Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 600V ; Current - Continuous Drain (Id) @ 25
Manufacturer
Fairchild Semiconductor
Datasheet
1.FCA20N60FS.pdf
(8 pages)
©2007 Fairchild Semiconductor Corporation
FCA20N60F Rev. C0
FCA20N60F
N-Channel SuperFET
600 V, 47 A, 70 mΩ
Features
• 650 V @ T
• Typ.R
• Fast Recovery Type (Typ. T
• Ultra Low Gate Charge (Typ. Q
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV
• Solar Inverter
• AC-DC Power Supply
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Absolute Maximum Ratings
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
DS(on)
J
= 150 mΩ
= 150°C
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
G
D
S
rr
= 160 ns )
g
= 75 nC )
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
®
Parameter
C
oss
TO-3PN
= 25°C)
FRFET
.eff = 165 pF )
C
C
= 25°C)
= 100°C)
®
MOSFET
1
Description
SuperFET
ation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This technology is tai-
lored to minimize conduction loss, provide superior switching
performance,dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server / telecom power, FPD
TV power, ATX power and industrial power applications. Super-
FET FRFET
performance can remove additional component and improve
system reliability.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
®
®
MOSFET is Fairchild Semiconductor
MOSFET’s optimized body diode reverse recovery
FCA20N60F
FCA20N60F
G
-55 to +150
12.5
± 30
20.8
1.67
600
690
208
300
20
60
20
50
0.6
40
S
D
March 2013
®
www.fairchildsemi.com
’s first gener-
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
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