FCB11N60_05 Fairchild Semiconductor, FCB11N60_05 Datasheet
FCB11N60_05
Related parts for FCB11N60_05
FCB11N60_05 Summary of contents
Page 1
... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FCB11N60 Rev. A1 Description SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance ...
Page 2
Package Marking and Ordering Information Device Marking Device FCB11N60 FCB11N60 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS / ∆T Coefficient J BV Drain-Source Avalanche Breakdown DS Voltage I Zero Gate Voltage ...
Page 3
Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7 6.0 V Bottom : 5 ...
Page 4
Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by ...
Page 5
3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ...
Page 6
Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCB11N60 Rev. A1 Peak Diode Recovery ...
Page 7
Mechanical Dimensions 9.90 ±0.10 1.27 2.54 TYP 10.00 FCB11N60 Rev -PAK 2 ±0.20 ±0.10 0.80 2.54 TYP ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 ±0.15 0.10 ±0.20 2.40 +0.10 0.50 –0.05 ±0.20 10.00 (8.00) (4.40) (2XR0.45) ±0.10 0.80 ...
Page 8
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...