PA45DIE Apex Microtechnology Corporation, PA45DIE Datasheet

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PA45DIE

Manufacturer Part Number
PA45DIE
Description
High Voltage Power op Amp
Manufacturer
Apex Microtechnology Corporation
Datasheet
ABSOLUTE MAXIMUM RATINGS
NOTE: Because of wafer probing test limitations, full power tests are not possible. Refer to parent
DC WAFER PROBED SPECIFICATIONS
PARAMETER
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. supply
BIAS CURRENT, initial
OFFSET CURRENT, initial
SUPPLY CURRENT, quiescent
COMMON MODE REJECTION
VOLTAGE SWING, positive
VOLTAGE SWING, negative
ALARM, sink current
ALARM, leakage
NOTES: 1. Current limit, I
DIE
LAYOUT
Thickness: 11 Mil (280µ)
Backside: Silicon (no back metal)
Small Bond pads: 5 Mil sq (127µ) AI
Large Bond pads: 5 x 11 Mil (127µ x 280µ) AI
NOTE: Tie backside to –V
M I C R O T E C H N O L O G Y
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL prodlit@apexmicrotech.com
This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specifications are subject to change without notice.
product data sheet PA45 for typical AC, DC and power performance specifications.
ommended die attach material is either conductive
epoxy or silver-glass. Lowest thermal resistance will
be obtained with silver-glass.
220 Mil
5588µ
1
3
4
5
6
7
8
9
10
1
2
Q
pin, and shutdown verified as operational.
S
through die attach medium. Rec-
H T T P : / / W W W . A P E X M I C R O T E C H . C O M
NO LONGER SUPPORTED FOR DESIGN-IN
11
12
13
14
15
16
220 Mil
5588µ
TEST CONDITIONS
V
V
V
V
V
V
V
V
V
V
PA45DIEU REV. A FEBRUARY 1998 © 1998 Apex Microtechnology Corp.
HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
S
S
S
S
S
CM
S
S
S
S
= ±20V to ±75 V
= ±20V
= ±20V
= ±20V
= ±20V
= ±50V, I
= ±50V, I
= ±20V to ±75 V
= ±20V to ±75 V
= ±45V, V
O
O
SUPPLY VOLTAGE, +V
OUTPUT CURRENT, continuous
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, junction
= 40mA
= –40mA
S
= ±75V
25
24
23
22
21
20
19
18
17
PA45DIE
Recommended wire is 2 mil aluminum. All large bond pads
must be used to avoid excessive current density in the die
metalization.
Pad
1
2
3*
4*
5
6-10
* Pad 3 (Alarm) is tied to a switched current source. When an
over-temperature condition exits the current source turns on
and sinks 90µA to –V
output stage when at least 90µA is pulled from pad 4 to any
voltage at least 3 volts less positive than +V
example). When pad 3 is tied to pad 4 an over-temperature
condition will shut off the output stage until power is cycled
and the fault is removed. Normally pad 22 (I
When pad 22 is tied to pad 23 the quiescent current in the
output stage is disabled. The result is lower quiescent but
class C biasing of the output stage.
CAUTION
S
to –V
Function
– Input
+ Input
Alarm
Shutdown
NC
–V
( 8 0 0 ) 5 4 6 - A P E X
S
S
MIN
–40
84
40
90
PA45DIE is a MOSFET amplifier. ESD handling
procedures must be observed.
S
. Pad 4 (Shutdown) will shut off the
Pad
11-16
17-21
22*
23
24
25
150V
5A
±16V
±V
150°C
MAX
( 8 0 0 ) 5 4 6 - 2 7 3 9
S
25
25
26
1
1
1
Function
Output Drive
+V
I
Compensation
Compensation
Current Limit Sense
Q
S
Q
UNITS
S
) is left open.
µV/V
mV
mA
nA
nA
dB
µA
µA
(ground, for
V
V
219
D

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