1N5059AMO Philips Semiconductors (Acquired by NXP), 1N5059AMO Datasheet - Page 3

• Manufacturer Part Number: 1N5059AMO
• Description: 1N5059 to 1N5062; Controlled Avalanche Rectifiers;; Package: SOD57
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.9.
1996 Jun 19
V
V
I
t
C
R
R
SYMBOL
SYMBOL
j
R
rr
F
(BR)R
= 25 C; unless otherwise specified.
d
th j-tp
th j-a
Controlled avalanche rectifiers
For more information please refer to the “General Part of associated Handbook” .
forward voltage
reverse avalanche
breakdown voltage
reverse current
reverse recovery time when switched from I
diode capacitance
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
1N5059
1N5060
1N5061
1N5062
PARAMETER
PARAMETER
I
I
I
V
V
measured at I
V
F
F
R
R
R
R
= 1 A; T
= 1 A; see Fig.6
= 0.1 mA
= V
= V
= 0 V; f = 1 MHz; see Fig.8
RRMmax
RRMmax
j
= T
; see Fig.7
; T
R
CONDITIONS
j max
= 0.25 A; see Fig.10
j
= 165 C; see Fig.7
; see Fig.6
F
3
= 0.5 A to I
lead length = 10 mm
note 1
R
= 1 A;
CONDITIONS
MIN.
225
450
650
900
1N5059 to 1N5062
TYP.
50
3
Product specification
VALUE
MAX.
150
100
46
0.8
1.0
1
V
V
V
V
V
V
pF
A
A
s
UNIT
UNIT
K/W
K/W