BAW101E6327 Infineon Technologies Corporation, BAW101E6327 Datasheet - Page 2

• Manufacturer Part Number: BAW101E6327
• Description: Silicon Switching Diode Array
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
Forward voltage
I
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
(BR)
F
F
R
R
R
L
= 100 mA
= 10 mA, I
= 250 V
= 250 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA


R
A
= 10 mA, measured at I
= 150 °C
F
D.U.T.
Oscillograph
A
= 25°C, unless otherwise specified
EHN00019
R
= 1mA,
Oscillograph: R = 50
Pulse generator: t
2
Symbol
V
I
V
C
t
R
rr
(BR)
F
T
R
p
i
min.
300
= 10
= 50

-
-
-
-
-
, t
r


= 0.35ns, C
s , D = 0.05, t
Values
typ.
-
-
-
-
6
1
max.
0.15
Feb-03-2003
1.3
50
BAW101...
-
-
-


r
1pF
= 0.6ns,
Unit
V
µA
V
pF
µs