BAT240AE6327 Infineon Technologies Corporation, BAT240AE6327 Datasheet
BAT240AE6327
Manufacturer Part Number
BAT240AE6327
Description
Silicon Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAT240AE6327.pdf
(4 pages)
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Silicon Schottky Diode
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BAT240A
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current (t
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
Rectifier Schottky diode for telecommunication
High reverse voltage
For power supply
For clamping and protection in
and industrial applications
high voltage applications
thJA
please refer to Application Note Thermal Resistance
Marking
4Ms
1)
S
10ms)
= 28 °C
1=C1/A2
Pin Configuration
1
2 = C2
Symbol
V
V
I
I
P
T
T
R
F
FSM
j
stg
R
RM
tot
thJS
3 = A1
-55 ... 150
3
Value
240
400
400
250
80
305
1
Package
SOT23
1
Jul-06-2001
BAT240A
VPS05161
Unit
V
mA
A
mW
°C
K/W
2
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BAT240AE6327 Summary of contents
Page 1
Silicon Schottky Diode Rectifier Schottky diode for telecommunication and industrial applications High reverse voltage For power supply For clamping and protection in high voltage applications ESD : E lectro s tatic d ischarge sensitive device, observe ...
Page 2
Electrical Characteristics at T Parameter DC characteristics Breakdown voltage I = 500 µA (BR) Reverse current V = 200 240 R Forward voltage ...
Page 3
Forward current 500 mA 400 350 300 250 200 150 100 Permissible Pulse Load K ...
Page 4
Derating curve reverse voltage Parameter Duty cycle < 0.01 300 V t =100ms p DC 200 150 100 =300µs p 100 ...