BAT68-03W Infineon Technologies Corporation, BAT68-03W Datasheet
BAT68-03W
Manufacturer Part Number
BAT68-03W
Description
Silicon Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAT68-03W.pdf
(4 pages)
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Thermal Resistance
Junction - ambient
Junction - soldering point
Silicon Schottky Diodes
• For mixer applications in the VHF / UHF range
• For high-speed switching applications
Type
BAT 68
BAT 68-04
BAT 68-05
BAT 68-06
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, T
Junction temperature
Storage temperature
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
1
BAT 68
EHA07002
3
1
1)
BAT 68-04
Marking
83s
84s
85s
86s
S
3
≤ 60 °C
EHA07005
2
1 = A
1 = A1
1 = A1
1 = C1
1
BAT 68-05
Pin Configuration
3
1
2 n.c.
2 = C2
2 = A2
2 = C2
EHA07004
R
R
Symbol
V
I
P
T
T
F
j
stg
R
tot
thJA
thJS
2
1
BAT 68-06
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
3
-55 ... 150
3
EHA07006
Value
≤750
≤590
130
150
150
8
2
Package
SOT-23
SOT-23
SOT-23
SOT-23
1
Oct-07-1999
BAT 68
VPS05161
Unit
V
mA
mW
°C
K/W
2
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BAT68-03W Summary of contents
Page 1
Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications BAT 68 BAT 68- EHA07002 ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type ...
Page 2
Electrical Characteristics at T Parameter DC characteristics Breakdown voltage = 10 µA I (BR) Reverse current = Reverse current = ° Forward voltage = ...
Page 3
Forward current Package mounted on alumina BAT 68 BAT 68... 200 Ι 160 140 120 100 Forward current ...
Page 4
Diode capacitance 1MHz BAT 68... 1 0 Differential forward resistance kHz EHD07103 BAT 68... 3 10 Ω ...