GP1200ESM33 Dynex Semiconductor, GP1200ESM33 Datasheet - Page 4

• Manufacturer Part Number: GP1200ESM33
• Description: High Reliability Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1200ESM33
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/9
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
I
I
OFF
t
REC
OFF
t
REC
t
t
ON
ON
rr
rr
r
f
r
f
rr
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
R
R
G(ON)
G(ON)
I
I
F
F
= 1200A, V
= 1200A, V
dI
Test Conditions
dI
Test Conditions
= 1.8 , R
= 1.8 , R
F
F
C
C
V
V
/dt = 4500A/ s
/dt = 5500A/ s
V
V
GE
GE
I
CE
L ~ 90nH
I
CE
L ~ 90nH
C
GE
C
GE
= 1200A
= 660nF,
= 1200A
= 660nF,
= 1800V
= 1800V
= 15V
= 15V
R
R
G(OFF)
G(OFF)
= 1800V,
= 1800V,
= 3.3
= 3.3
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
1000
1300
1200
Typ.
Typ.
600
3.4
1.5
2.4
1.1
0.5
2.3
1.1
3.2
0.9
1.6
1.1
0.4
1.6
0.7
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
A
A
J
J
J
J
J
J
C
C
s
s
s
s
s
s
s
s