GP1200FSS18 Dynex Semiconductor, GP1200FSS18 Datasheet - Page 6

• Manufacturer Part Number: GP1200FSS18
• Description: Single Switch Igbt Module
• Manufacturer: Dynex Semiconductor

GP1200FSS18
10000
6/10
1000
2400
2200
2000
1800
1600
1400
1200
1000
100
800
600
400
200
10
1
0
0
1
Fig. 7 Diode typical forward characteristics
Fig. 9 Forward bias safe operating area
0.5
I
C max
Collector emitter voltage, V
(DC)
10
1.0
Foward voltage, V
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
100
2.0
T
j
= 25˚C
F
- (V)
ce
2.5
1000
- (V)
T
j
= 125˚C
t
t
t
p
p
p
3.0
= 100 s
= 1ms
= 50 s
10000
3.5
2500
2000
1000
3000
1500
100
500
0.1
10
1
0
1
0
T
V
R
case
ge
g(off)
Fig. 8 Reverse bias safe operating area
Fig. 10 Transient thermal impedance
= ±15V
= 125˚C
= 2.2Ω
400
Collector-emitter voltage, V
10
Pulse width, t
800
100
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p
1200
- (ms)
ce
Transistor
1000
- (V)
Diode
1600
10000
2000