GP1601FSS18 Dynex Semiconductor, GP1601FSS18 Datasheet - Page 6

• Manufacturer Part Number: GP1601FSS18
• Description: Single Switch Low Vce ( Sat ) Igbt Module
• Manufacturer: Dynex Semiconductor

GP1601FSS18
10000
6/9
1000
3200
2800
2400
2000
1600
1200
100
800
400
10
1
0
1
0
I
C
Fig. 7 Diode typical forward characteristics
max. (single pulse)
Fig. 9 Forward bias safe operating area
0.5
Collector-emitter voltage, V
10
1.0
Foward voltage, V
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
100
2.0
T
j
= 25˚C
F
- (V)
ce
2.5
- (V)
1000
T
j
= 125˚C
3.0
t
p
100 s
50 s
= 1ms
10000
3.5
3500
3000
2500
2000
1500
1000
500
100
0.1
10
0.001
0
1
0
Conditions:
T
V
R
case
ge
g(off)
Fig. 8 Reverse bias safe operating area
200 400 600 800 1000 1200 1400 1600 1800 2000
Fig. 10 Transient thermal impedance
= 15V,
= 125˚C,
= 2.2Ω
Collector-emitter voltage, Vce - (V)
0.01
Pulse width, t
0.1
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p
- (s)
1
Transistor
Diode
10