S1M1W043 Epson Electronics America, Inc., S1M1W043 Datasheet
S1M1W043
Related parts for S1M1W043
S1M1W043 Summary of contents
Page 1
... The asynchronous and static nature of the memory requires no external clock and no refreshing circuit possible to control the data width by the data byte control. 3-state output allows easy expansion of memory capacity. The temperature range of the S1M1W043B0J7 is from – and it is suitable for the industrial products. ...
Page 2
... S1M1W043B0J7 PIN CONFIGURATION TFBGA-48 pin I/ I/O10 I/O11 C V I/O12 I/O13 E DD I/O15 I/O14 F I/O16 Top view (Looking through part) PIN DESCRIPTION A0 to A17 Address Input WE Write Enable OE Output Enable CS1 Chip Select1 CS2 Chip Select2 ...
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... DDA1 I = 0mA cyc I DDO I = 0mA I/O = 1.8V DD Conditions ADD ADD I/O I/O S1M1W043B0J7 + 0 0.3 DD 0.5 (Ta = – 1.65 to 2.2V Typ. Max. 1.8/2.0 2.2 0.0 0.0 – V +0.3 DD – 0.3 (V =0V – 1. Min. Typ. Max. –1.0 – 1.0 –1.0 – ...
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... Ta = – S1M1W043B0J7 Unit 1.65 to 2.2V Max. – ns – ns – ns – ns – ns – ns – ns – ns – ns – – ns (1.65V to 2.2V) DD (1.65V to 2.2V 5pF (Includes Jig Capacitance) ...
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... I/ (Dout (Din CS2, output buffer "Hi-Z" state even if O Conditions V = 1.2V DDR CS1 = CS2 V – 0.2V or CS2 0.2V DD S1M1W043B0J7 * CW1 t CW2 High CW1 ...
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... S1M1W043B0J7 Data retention timing (CS1 Control 1.65V V 1.0V DDR t Data hold time CDR CS1 V – 0.2V DD CS1 0.8xV FUNCTIONS Truth Table CS1 CS2 ...
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... LB and "High", CS2 = "Low" 0.2V, there is almost no current flow except through the high resistance parts S1M1W043B0J7 ="Low",CS2 = "High" and ...
Page 8
... S1M1W043B0J7 PACKAGE DIMENSIONS PFBGA-48 pin A Index Base Tape Side View Bottom View 1.125Typ. 8 Top View 7.0 0 SRAM Die 0.75Typ. 0.375Typ. Unit : mm Rev.1.0 ...
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... Phone: 042–587–5812 FAX: 042–587–5564 ED International Marketing Department Asia 421-8 Hino, Hino-shi, Tokyo 191-8501, JAPAN Phone: 042–587–5814 FAX: 042–587–5110 S1M1W043B0J7 EPSON Electronic Devices Website http://www.epson.co.jp/device/ First issue March, 2001 Printed in Japan H Rev.1.0 ...