RL1024P Perkin Elmer Optoelectronics, RL1024P Datasheet - Page 44

• Manufacturer Part Number: RL1024P
• Manufacturer: Perkin Elmer Optoelectronics

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infrared emitting diodes
www.optoelectronics.perkinelmer.com
Features 880 nm
• Nine standard packages in
• End- and side-radiating packages
• Graded Output
• High efficiency GaAIAs, 880 nm
Features 940 nm
• Three standard packages in
• End-radiating packages
• High power GaAs, 940 nm
Typical Applications
• Computer/Business Equipment
• Industrial
• Consumer
Principle of Operation
Because they emit at wavelengths
which provide a close match to the
peak spectral response of silicon
photodetectors, both GaAs and
GaAIAs IREDs are often used with
phototransistors.
Datasheets available upon request
hermetic and low-cost epoxy
LPE process Delivers twice the
power of conventional GaAs
940 nm emitters
hermetic and low-cost epoxy
LPE process
• Write-Protect Control
• Margin Controls—Printers
• LED Light Source—Light Pens
• Security Systems
• Safety Shields
• Coin Counters
• Lottery Card Readers
• Position Sensors—Joysticks
• Remote Controllers—Toys,
• Games—Laser Tag
• Camera Shutter Control
Appliances, Audio/Visual
Equipment
Description
Light Emitting Diodes (LEDs) are solid-state P-N junction
devices that emit light when forward biased. An IRED is an
Infrared Emitting Diode, a term specifically applied to
PerkinElmer IR emitters. Unlike incandescent lamps, which emit
light over a very broad range of wavelengths, LEDs emit light
over such a narrow bandwidth that they appear to be emitting
a single “color” . Their small size, long operating lifetimes, low
power consumption, compatibility with solid-state drive
circuitry, and relatively low cost make LEDs the preferred light
source in many applications.
LEDs are made from a wide range of semiconductor materials.
The emitted peak wavelength depends on the semiconductor
material chosen and how it is processed. LEDs can be made that
emit in the visible or near-infrared part of the spectrum.
The P-N junction is formed by doping one region of the material
with donor atoms and the adjacent region with acceptor atoms.
Like all P-N junction devices, LEDs exhibit the familiar diode
current-voltage characteristics. LEDs emit light only when they
are biased in the forward direction. Under forward-biased
conditions, carriers are given enough energy to overcome the
potential barrier existing at the junction. After crossing the junction,
these carriers will recombine. A percentage of the carriers will
recombine by a radiative process in which the hole-electron
recombination energy is released as a photon of light. The
remaining carriers recombine by a non-radiative process and give
up their energy in the form of heat. The amount of light generated,
or power output of the LED, varies almost linearly with forward
current. Doubling the forward current approximately doubles
the power output.
880nm IREDs
This series of infrared emitting diodes (IREDs) consists of three
standard chips in nine different packages that provide a broad
range of mounting, lens and power-output options.
940nm IREDs
This series of infrared emitting diodes (IREDs) consists of two
standard chips in three different packages.
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