GS152B GTM Corporation, GS152B Datasheet - Page 2

• Manufacturer Part Number: GS152B
• Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: GTM Corporation

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Notes: 1. Pulse width limited by Max. junction temperature.
GS152B
2. Pulse width 300us, duty cycle 2% .
3. Surface mounted on FR4 board, t
Parameter
Parameter
2
2
2
:
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
/
Tj
10sec.
Min.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
10.8
79.1
41.3
Typ.
-0.1
290
1.5
3.2
0.7
0.8
9.8
60
45
-
-
-
-
-
-
-
Max.
±100
Max.
-1.2
300
500
-1.1
-10
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
m
nA
uA
nC
ns
Pf
V
V
S
V
V
Reference to 25 , I
V
V
V
V
V
V
I
V
V
V
I
V
R
V
V
f=1.0MHz
I
D
D
S
GS
DS
DS
GS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
=-0.7A
=-0.4A
=-0.7A, V
=6
=0, I
=V
=-10V, I
= ±12V
=-20V, V
=-4.5V, I
=-2.5V, I
=-10V
=-4.5V
=-10V
=-4.5V
=0V
=-20V
Test Conditions
Test Conditions
ISSUED DATE :2006/02/06
REVISED DATE :
GS
D
, I
=-250uA
D
GS
D
=-1mA
D
D
GS
=-0.4A
=-0.4A
=-0.4A
=0V
=0
Page: 2/4
:
D
=-1mA