BST16 Zetex Inc., BST16 Datasheet
BST16
Manufacturer Part Number
BST16
Description
PNP High Voltagetransistor
Manufacturer
Zetex Inc.
Datasheet
1.BST16.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BST16
Manufacturer:
NXP/恩智浦
Quantity:
20 000
SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996
FEATURES
*
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
For typical characteristics graphs see FMMTA92 datasheet.
PARAMETER
Collector-Base Voltage
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature
Range
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
High V
Low saturation voltage
CEO
amb
SYMBOL
V
V
V
I
I
V
h
f
C
CBO
CEO
EBO
T
=25°C
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
obo
BST39
BT2
MIN.
-350
-300
-4
30
15
3 - 76
amb
SYMBOL
V
V
V
I
I
P
T
TYP.
CM
C
tot
j
CBO
CEO
EBO
:T
stg
= 25°C unless otherwise stated).
MAX.
-1
-50
-20
- 2.0
-0.5
150
15
UNIT
V
V
V
V
V
MHz
pF
A
A
A
-65 to +150
VALUE
-350
-300
-500
-4
-1
1
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
f = 30MHz
V
C
C
E
C
C
C
C
CB
CB
EB
CB
=-100 A
=-100 A
=-1mA
=-50mA, I
=-30mA, I
=-50mA, V
=-10mA, V
=-4V
=-280V
=-250V
=-10V, f=1MHz
BST16
C
SOT89
B
B
B
CE
CE
=-5mA*
=-3mA*
=-10V*
=-10V*
UNIT
C
mA
W
°C
V
V
V
A
E
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