STT3490N SeCoS Halbleitertechnologie GmbH, STT3490N Datasheet

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STT3490N

Manufacturer Part Number
STT3490N
Description
N-channel Enhancement Mode Mos.fet 1.2 A, 150 V, Rds On 700 M
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STT3490N
Manufacturer:
SECOS
Quantity:
20 000
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. B
KEY FEATURES
TYPICAL APPLICATIONS
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS(T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
Notes
V
150
DS
Low R
Low thermal impedance.
Fast switching speed.
White LED boost converters.
Automotive Systems
Industrial DC/DC Conversion Circuits
a.
b.
(V)
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
Elektronische Bauelemente
DS(on)
1200@V
700@V
trench technology.
R
a
DS
b
(on) (m
GS
GS
a
= 10V
Parameter
Parameter
= 4.5V
a
A suffix of “-C” specifies halogen and lead-free
I
THERMAL RESISTANCE RATINGS
A
D
1.2
(A)
1
=25
RoHS Compliant Product
a
°C
Steady State
t ≦ 10 sec
UNLESS OTHERWISE NOTED)
T
T
T
T
A
A
A
A
D
D
G
= 25
= 70
= 25
= 70
°C
°C
°C
°C
N-Channel Enhancement Mode Mos.FET
Symbol
Symbol
Tj, Tstg
R
V
V
I
P
I
DM
I
1.2 A, 150 V, R
GS
JA
DS
D
S
D
D
D
S
STT3490N
Any changes of specification will not be informed individually.
D G
F
REF.
A
B
C
D
E
F
6
1
DS(ON)
Maximum
-55 ~ 150
Ratings
Maximum
Min.
2.70
2.60
1.40
0.30
A
E
5
2
Millimeter
1.10 MAX.
1.90 REF.
62.5
150
±20
±10
110
1.2
2.5
1.3
1
2
4
3
700 m
TSOP-6
Max.
3.10
3.00
1.80
0.50
L
B
K
REF.
G
H
K
L
J
Min.
Millimeter
0
0.60 REF.
0.12 REF.
0.95 REF.
Page 1 of 4
C
°C / W
Unit
Unit
Max.
0.10
°C
10°
W
V
V
A
A
A
H
J

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STT3490N Summary of contents

Page 1

... =25 UNLESS OTHERWISE NOTED) ° ° ° ° °C A THERMAL RESISTANCE RATINGS t ≦ 10 sec Steady State STT3490N 1.2 A, 150 V, R 700 m DS(ON) TSOP Millimeter REF. REF. Min. Max. A 2.70 3. ...

Page 2

... d(on d(off 320 iss oss rss STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, R 700 m DS(ON) Test Conditions 3 250uA ±100 0V ±20V 120V 120V ...

Page 3

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev. B STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, R 700 m DS(ON) Any changes of specification will not be informed individually. Page ...

Page 4

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev. B STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, R 700 m DS(ON) Any changes of specification will not be informed individually. Page ...

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