PEMD9 Philips Semiconductors (Acquired by NXP), PEMD9 Datasheet - Page 3

• Manufacturer Part Number: PEMD9
• Description: PEMD9; Npn/pnp Resistor-equipped Transistors; R1 = 10 Kohm, R2 = 47 KOhm;; Package: SOT666 (SS-Mini)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2002 Sep 05
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
O
CM
stg
j
amb
CBO
CEO
EBO
i
tot
tot
th j-a
NPN/PNP resistor-equipped transistors;
R1 = 10 k , R2 = 47 k
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
input voltage TR2
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to
ambient
positive
negative
positive
negative
PARAMETER
PARAMETER
open emitter
open base
open collector
T
T
notes 1 and 2
amb
amb
3
25 C; note 1
25 C; note 1
CONDITIONS
CONDITIONS
65
65
MIN.
VALUE
416
50
50
10
+40
+6
100
100
200
+150
150
+150
300
Product specification
6
40
MAX.
PEMD9
UNIT
K/W
V
V
V
V
V
V
V
mA
mA
mW
mW
C
C
C
UNIT