SI9433DY Vishay Siliconix, SI9433DY Datasheet - Page 4

• Manufacturer Part Number: SI9433DY
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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4
Si9433DY
Vishay Siliconix
0.01
–0.2
–0.4
0.1
10
0.8
0.6
0.4
0.2
0.0
1
2
1
–50
0
10
–4
Source-Drain Diode Forward Voltage
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
I
D
SD
T
= 250 A
J
0
0.4
= 150 C
– Source-to-Drain Voltage (V)
Single Pulse
Threshold Voltage
T
J
– Temperature ( C)
25
0.6
10
–3
50
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
1.0
= 25 C
100
1.2
125
10
–2
Square Wave Pulse Duration (sec)
150
1.4
10
–1
0.20
0.16
0.12
0.08
0.04
70
60
50
40
30
20
10
0
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
1
0.1
– Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
I
DM
D
JM
= 5.1 A
4
Time (sec)
– T
t
1
A
= P
t
2
DM
1
Z
6
S-00652—Rev. J, 27-Mar-00
thJA
thJA
Document Number: 70125
t
t
1
2
(t)
= 50 C/W
10
8
10
30
10
30