SI9435BDY-T1 Vishay Siliconix, SI9435BDY-T1 Datasheet
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SI9435BDY-T1
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SI9435BDY-T1 Summary of contents
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... V = −4 SO Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...
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... Si9435BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic ...
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... Total Gate Charge (nC) g Document Number: 72245 S-32274—Rev. B, 03-Nov-03 New Product 12.8 16.0 Si9435BDY Vishay Siliconix Transfer Characteristics 125_C C 5 25_C −55_C − Gate-to-Source Voltage (V) ...
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... Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J www.vishay.com 4 New Product T = 25_C J 0.8 1.0 1.2 100 125 150 ...
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... Document Number: 72245 S-32274—Rev. B, 03-Nov-03 New Product −2 − Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec) Si9435BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 70_C/W ...