SI9926DY Fairchild Semiconductor, SI9926DY Datasheet - Page 4

• Manufacturer Part Number: SI9926DY
• Description: Dual N-Channel 2.5V Specified PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
100
Figure 9. Maximum Safe Operating Area.
5
4
3
2
1
0
0.1
10
Figure 7. Gate Charge Characteristics.
0
1
0.001
0.1
0.01
0.1
I
D
R
0.0001
SINGLE PULSE
R
1
= 3A
DS(ON)
JA
V
T
GS
A
= 135
= 25
= 10V
LIMIT
2
o
o
C/W
C
D = 0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.2
Q
0.1
1
g
0.05
, GATE CHARGE (nC)
0.02
0.001
4
DC
0.01
10s
SINGLE PULSE
1s
Figure 11. Transient Thermal Response Curve.
100ms
V
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
= 5V
6
10ms
10
1ms
15V
0.01
100 s
10V
8
100
10
0.1
t
1
, TIME (sec)
50
40
30
20
10
1000
0
0.001
800
600
400
200
Figure 8. Capacitance Characteristics.
0
0
Figure 10. Single Pulse Maximum
1
0.01
4
Power Dissipation.
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
C
C
t
C
1
OSS
RSS
8
, TIME (sec)
ISS
1
P(pk)
12
Duty Cycle, D = t
T
R
10
J
R
SINGLE PULSE
R
JA
- T
100
JA
JA
(t) = r(t) + R
T
A
A
t
= 135°C/W
= 135°C/W
1
= P * R
= 25°C
t
2
V
f = 1MHz
16
Si9926DY Rev A (W)
100
GS
= 0 V
JA
1
JA
(t)
/ t
2
1000
1000
20