SI9934BDY Vishay Siliconix, SI9934BDY Datasheet - Page 2

• Manufacturer Part Number: SI9934BDY
• Description: Dual P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Si9934BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
b
8
4
0
0
Parameter
a
a
V
1
V
GS
DS
a
Output Characteristics
= 5 thru 3 V
− Drain-to-Source Voltage (V)
a
a
J
2
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
)
4
2.5 V
2 V
1.5 V
V
5
I
V
D
DS
DS
^ −1 A, V
= 6 V, V
I
F
V
= −12 V, V
V
V
V
V
V
GS
= −1.7 A, di/dt = 100 A/ms
DS
GS
I
DS
DS
V
S
DS
Test Condition
V
V
DS
= −1.7 A, V
DD
DD
= −4.5 V, I
= −5 V, V
= V
= −2.5 V, I
= −10 V, I
= −12 V, V
= 0 V, V
GS
= 6 V, R
= 6 V, R
GEN
GS
GS
= −4.5 V, I
, I
= −4.5 V, R
D
= 0 V, T
GS
GS
D
= −250 mA
D
D
GS
L
L
GS
= −6.4 A
= −4.5 V
= −1.8 A
= 6 W
= 6 W
= −6.4 A
= "8 V
= 0 V
= 0 V
D
J
20
16
12
= −6.4 A
= 55_C
8
4
0
g
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
Min
−0.6
−20
− Gate-to-Source Voltage (V)
25_C
1.0
T
C
= 125_C
1.5
0.028
0.044
Typ
−0.8
2.6
4.0
17
13
19
35
80
50
40
9
S-41578—Rev. C, 23-Aug-04
Document Number: 72525
−55_C
2.0
"100
Max
0.035
0.056
−1.4
−1.2
120
−1
−5
20
30
55
75
80
2.5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
3.0