BFR93AR Vishay Intertechnology, BFR93AR Datasheet - Page 2

• Manufacturer Part Number: BFR93AR
• Description: Silicon NPN Planar RF Transistor
• Manufacturer: Vishay Intertechnology

Maximum Thermal Resistance
T
Electrical DC Characteristics
T
Electrical AC Characteristics
T
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
Collector-emitter saturation voltage
DC forward current transfer ratio
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
www.vishay.com
2 (9)
amb
amb
amb
Parameter
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
Parameter
Parameter
plated with 35
V
V
V
V
I
V
I
V
Z
V
f
Z
V
C
C
1
CE
CB
CE
EB
CE
CE
CE
L
CE
S
CE
m
= 806 MHz, f
= 5 mA
= 25 mA
m Cu
= Z
= Z
= 0.5 V, f = 1 MHz
= 5 V, I
= 10 V, f = 1 MHz
= 5 V, f = 1 MHz
= 8 V, Z
= 8 V, Z
= 8 V, I
= 8 V, I
= 8 V, I
Test Conditions
V
V
V
I
V
Lopt
L
C
C
CE
CB
EB
CE
= 50
= 1 mA, I
= 50 mA, I
, f = 800 MHz
= 2 V, I
= 20 V, V
= 10 V, I
= 5 V, I
C
C
C
C
Test Conditions
S
S
W
= 30 mA, f = 500 MHz
= 25 mA, Z
= 25 mA, d
= 25 mA, f = 800 MHz
= 50
= 50
2
Test Conditions
= 810 MHz,
C
C
B
E
B
W
W
= 0
= 0
= 30 mA
BE
, f = 800 MHz,
, f = 800 MHz,
= 0
= 5 mA
= 0
IM
S
= 50
= 60 dB,
W
,
3
Symbol
V
Symbol
1
G
C
C
C
IP
R
V
f
F
F
= V
Symbol
T
eb
cb
ce
pe
V
(BR)CEO
thJA
3
I
I
I
CEsat
h
CES
CBO
EBO
FE
2
Min
Min Typ Max Unit
12
40
Document Number 85035
Value
450
0.45
Typ
260
0.2
1.5
1.6
2.1
14
31
6
0.1
90
Rev. 3, 20-Jan-99
Max
100
100
150
0.4
10
K/W
Unit
dBm
GHz
Unit
mV
pF
pF
pF
dB
dB
dB
m
nA
m
V
V
A
A