2N4033J Semicoa Semiconductors, 2N4033J Datasheet - Page 2
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2N4033J
Manufacturer Part Number
2N4033J
Description
Package = TO-39 ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 80 ;; Vebo (V) = 5 ;; Ic (A) = 1.00 ;; (Power W) ta = 0.8 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.15
Manufacturer
Semicoa Semiconductors
Datasheet
1.2N4033J.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N4033JAN
Manufacturer:
HITTITE
Quantity:
1 400
Company:
Part Number:
2N4033JANTX
Manufacturer:
Microsemi
Quantity:
1 400
Copyright 2002
Rev. E
Off Characteristics
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Parameter
Parameter
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
V
V
V
V
V
I
I
I
I
I
C
C
I
h
h
h
h
h
|h
CBO1
CBO2
CBO3
EBO1
EBO2
BEsat1
BEsat2
CEsat1
CEsat2
CEsat3
CEX
OBO
FE1
FE2
FE3
FE4
FE5
t
t
t
t
IBO
FE
d
r
s
f
Semicoa Semiconductors, Inc.
|
www.SEMICOA.com
V
V
V
V
V
V
I
I
I
I
I
T
I
I
I
I
I
V
f = 100 MHz
V
100 kHZ < f < 1 MHz
V
100 kHZ < f < 1 MHz
I
I
C
C
C
C
C
C
C
C
C
C
C
C
A
CB
CB
CB
CE
BE
BE
CE
CB
EB
= 100 µA, V
= 100 mA, V
= 500 mA, V
= 1 A, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 1 A, I
= 500 mA, I
= 500 mA, I
= -55°C
= 60 Volts, V
= 5 Volts
= 3 Volts
= 10 Volts, I
= 0.5 Volts, I
= 80 Volts
= 60 Volts
= 60 Volts, T
= 10 Volts, I
Test Conditions
Test Conditions
Test Conditions
B
CE
= 100 mA
= 5 Volts
B
B
B
B
B
B
CE
CE
CE
CE
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 50 mA
= 50 mA
C
E
C
A
= 5 Volts
EB
= 5 Volts
= 5 Volts
= 5 Volts
= 50 mA,
= 0 mA,
= 0 mA,
= 150°C
= 2 Volts
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Min
Min
100
1.5
50
70
25
30
characteristics specified at T
Silicon PNP Transistor
Typ
Typ
Typ
2N4033
Max
Max
Max
0.15
0.50
1.00
300
175
0.9
1.2
6.0
10
10
25
25
10
25
20
80
15
25
35
D a t a S h e e t
Page 2 of 2
A
Units
Units
Units
Volts
Volts
= 25°C
µA
nA
µA
nA
µA
nA
pF
pF
ns
ns