STP20NM65N STMicroelectronics, STP20NM65N Datasheet

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STP20NM65N

Manufacturer Part Number
STP20NM65N
Description
Manufacturer
STMicroelectronics
Datasheet

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STP20NM65N
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Description
These devices are N-channel Power MOSFETs
realized using the second generation MDmesh™
technology. This revolutionary Power MOSFET
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1.
May 2011
STP20NM65N
STF20NM65N
Order codes
100 % avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STP20NM65N
STF20NM65N
Order codes
Device summary
@T
710 V
V
DSS
jmax
N-channel 650 V, 0.250 Ω , 15 A TO-220, TO-220FP
R
0.270 Ω
second generation MDmesh™ Power MOSFET
max.
DS(on)
20NM65N
20NM65N
Marking
15 A
Doc ID 13845 Rev 2
I
D
Figure 1.
TO-220FP
Package
TO-220
TO-220
Internal schematic diagram
1
2
STP20NM65N
3
STF20NM65N
TO-220FP
Packaging
Tubes
Tubes
1
www.st.com
2
3
1/16
16

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STP20NM65N Summary of contents

Page 1

... Device summary Order codes STP20NM65N STF20NM65N May 2011 second generation MDmesh™ Power MOSFET R DS(on max. 0.270 Ω Figure 1. Marking 20NM65N 20NM65N Doc ID 13845 Rev 2 STP20NM65N STF20NM65N TO-220 TO-220FP Internal schematic diagram Package Packaging TO-220 Tubes TO-220FP Tubes 1/16 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristecs (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/ Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STP20NM65N, STF20NM65N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain source voltage DS V Gate source voltage GS I Drain current continuous Drain current continuous T D (2) I Drain current pulsed DM P Total dissipation at T TOT (3) dv/dt Peak diode recovery voltage slope Insulation withstand voltage (RMS) from ...

Page 4

... Figure 16) (see . DSS Parameter Test conditions V = 325 =4.7 Ω = Figure 15) (see Figure 20) (see Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N Min. Typ 650 = =10 V 0.250 0.270 Min. Typ. 1280 = 0 - 110 260 - 4 ...

Page 5

... STP20NM65N, STF20NM65N Table 8. Source drain diode Symbol Source drain current I SD Source drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... Single pulse 10µs 100µs 1ms 10ms 100 V (V) DS Figure 7. AM09140v1 ( ( Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N Thermal impedance for TO-220 Thermal impedance for TO-220FP Transfer characteristics =19V AM09141v1 10 V (V) ...

Page 7

... STP20NM65N, STF20NM65N Figure 8. Normalized B VDSS BV DSS (norm) I =1mA 1.07 D 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 - Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations =520V =15A Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) I =250µA D 1.10 1.00 0.90 0.80 0.70 -50 -25 25 ...

Page 8

... Electrical characteristics Figure 14. Source-drain diode forward characteristics V SD (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 8/16 AM09148v1 T =-50° =25° =150° (A) SD Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N ...

Page 9

... STP20NM65N, STF20NM65N 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/16 Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N ...

Page 11

... STP20NM65N, STF20NM65N Table 9. TO-220 type A mechanical data Dim L20 L30 ∅ Min. Typ. 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 Doc ID 13845 Rev 2 Package mechanical data Max. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 3.85 2.95 11/16 ...

Page 12

... Package mechanical data Figure 21. TO-220 type A drawing 12/16 Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N 0015988_typeA_Rev_S ...

Page 13

... STP20NM65N, STF20NM65N Table 10. TO-220FP mechanical data Dim Dia mm Min. Typ. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2 28.6 9.8 2.9 15 Doc ID 13845 Rev 2 Package mechanical data Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 30.6 10.6 3.6 16.4 9.3 3.2 13/16 ...

Page 14

... Package mechanical data Figure 22. TO-220FP drawing A 14/ Dia Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N 7012510_Rev_K G ...

Page 15

... STP20NM65N, STF20NM65N 5 Revision history Table 11. Revision history Date 12-Sep-2007 23-May-2011 Revision 1 Initial release. Chapter 4: Package mechanical 2 Updated Doc ID 13845 Rev 2 Revision history Changes data. 15/16 ...

Page 16

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 13845 Rev 2 STP20NM65N, STF20NM65N ...

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