STP6N52K3 STMicroelectronics, STP6N52K3 Datasheet - Page 4

• Manufacturer Part Number: STP6N52K3
• Description: N-channel 525 V, 1 5 A, D?pak, Dpak, To-220fp, To-220 , Supermesh3tm Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/22
Electrical characteristics
(T
Table 4.
Table 5.
1. C
Table 6.
C
Symbol
V
Symbol
Symbol
C
V
R
oss eq
(BR)DSS
t
t
increases from 0 to 80% V
d(on)
d(off)
C
I
I
C
C
GS(th)
Q
Q
= 25 °C unless otherwise specified)
DS(on
R
DSS
GSS
Q
oss eq
t
t
oss
r
f
rss
iss
gs
gd
G
g
(1)
. is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 14994 Rev 2
V
V
f = 1 MHz open drain
V
V
(see
V
R
(see
I
V
V
V
V
D
DS
GS
DD
GS
DD
GS
GS
G
DS
DS
DS
= 1 mA, V
STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3
= 4.7 Ω, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz, V
= 0, V
= 10 V
= 260 V, I
= ± 20 V
= V
= 10 V, I
= 420 V, I
Figure
Figure
Test conditions
Test conditions
Test conditions
GS
DS
, I
20)
19)
GS
D
D
= 0 to 240 V
GS
D
D
= 50 µA
= 2.5 A
= 0
= 2.5 A,
= 5 A,
= 10 V
C
=125 °C
GS
= 0
Min.
Min.
Min.
525
3
-
-
-
-
-
Typ.
Typ.
TBD
Typ.
3.75
670
10
11
31
18
54
10
26
15
4
4
1
oss
when V
Max.
Max.
Max
± 10
4.5
1.2
50
1
-
-
-
-
-
D
Unit
Unit
S
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
Ω