BCR48 Infineon Technologies Corporation, BCR48 Datasheet - Page 2

• Manufacturer Part Number: BCR48
• Description: Npn/pnp Silicon Digital Transistor Array
• Manufacturer: Infineon Technologies Corporation

Thermal Resistance
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector cutoff current
V
Emitter cutoff current
V
DC current gain 2)
I
Collector-emitter saturation voltage2)
I
Input off voltage
I
Input on Voltage
I
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
I
Collector-base capacitance
V
1 For calculation of R
2) Pulse test: t < 300
C
C
C
C
C
C
C
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 40 V, I
= 10 V, I
= 10 V, f = 1 MHz
E
CE
CE
B
E
C
B
CE
= 0
CE
= 0.5 mA
= 0
= 0
= 0
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
thJA


= 5 V
s ; D < 2%
please refer to Application Note Thermal Resistance
1)
A
=25°C, unless otherwise specified
2
R
f
C
Symbol
V
V
I
I
h
V
V
V
R
R
CBO
EBO
T
FE
thJS
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
1
1
cb
/R
2
min.
0.8
0.9
50
50
70
32
1
-
-
-
-
-
Values


100
typ.
47
140
3
1
-
-
-
-
-
-
-
-
max.
Nov-29-2001
100
164
0.3
1.5
1.1
62
BCR48PN
3
-
-
-
-
-
K/W
MHz
pF
Unit
V
nA
µA
-
V
k
-