RN4910 Toshiba America Electronic Components, Inc., RN4910 Datasheet
RN4910
Related parts for RN4910
RN4910 Summary of contents
Page 1
... Collector current TOSHIBA Transistor RN4910 R1: 4.7kΩ (Q1, Q2 Common) Symbol Rating Unit V −50 V CBO V −50 V CEO V −5 V EBO I −100 mA C Symbol Rating Unit CBO CEO EBO I 100 RN4910 Unit: mm JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg 2001-06-07 ...
Page 2
... Q1, Q2 Common Maximum Ratings Characteristic Collector power dissipation Junction temperature Storage temperature range * Total rating Marking Equivalent Circuit (Top View) (Ta = 25° ° ° ° C) Symbol Rating Unit P 200 °C T 150 j °C T −55~150 stg 2 RN4910 2001-06-07 ...
Page 3
... I = 5mA ― 10V MHz ― (Ta = 25°C) Test Symbol Test Condition Circuit R1 ― ― 3 RN4910 Min Typ. Max Unit ― ― −100 nA ― ― −100 mA 120 ― 400 ― ― −0.1 −0.3 V ― 200 ― ...
Page 4
... Q1 4 RN4910 2001-06-07 ...
Page 5
... Q2 5 RN4910 2001-06-07 ...
Page 6
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 RN4910 000707EAA 2001-06-07 ...