RN4987 Toshiba America Electronic Components, Inc., RN4987 Datasheet
RN4987
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RN4987 Summary of contents
Page 1
... TOSHIBA Transistor RN4987 R1: 10kΩ R2: 47kΩ (Q1, Q2 Common) Symbol Rating Unit CBO CEO EBO I 100 mA C Symbol Rating Unit V −50 V CBO V −50 V CEO V −6 V EBO I −100 RN4987 Unit: mm JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg 2001-06-07 ...
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... Q1, Q2 Common Maximum Ratings Characteristic Collector power dissipation Junction temperature Storage temperature range * : Total rating Marking Equivalent Circuit (Top View) (Ta = 25° ° ° ° C) Symbol Rating Unit P 200 °C T 150 j °C T −55~150 stg 2 RN4987 2001-06-07 ...
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... V = −10V −5mA ― −10V (Ta = 25°C) Test Symbol Circui Test Condition t R1 ― ― R1/R2 ― ― 3 RN4987 Min Typ. Max Unit ― ― 100 nA ― ― 500 0.081 ― 0. ― ― ― ― 0.1 0.3 V 0.7 ― 1.8 V 0.5 ― ...
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... Q1 4 RN4987 2001-06-07 ...
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... Q2 5 RN4987 2001-06-07 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 RN4987 000707EAA 2001-06-07 ...