RN4990 Toshiba America Electronic Components, Inc., RN4990 Datasheet
RN4990
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RN4990 Summary of contents
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... Collector-emitter voltage Emitter-base voltage Collector current TOSHIBA Transistor RN4990 Symbol Rating Unit CBO CEO EBO I 100 mA C Symbol Rating Unit V −50 V CBO V −50 V CEO V −5 V EBO I −100 RN4990 Unit: mm JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg 2001-06-07 ...
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... Q1, Q2 Common Maximum Ratings (Ta = 25° ° ° ° C) Characteristic Collector power dissipation Junction temperature Storage temperature range * : Total rating Marking Equivalent Circuit (Top View) Symbol Rating Unit P 200 °C T 150 j °C T −55~150 stg 2 RN4990 2001-06-07 ...
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... V = −10V −5mA ― −10V 1MHz ― (Ta = 25°C) Test Symbol Test Condition Circuit R1 ― ― 3 RN4990 Min Typ. Max Unit ― ― 100 mA ― ― 100 mA 120 ― 700 ― ― 0.1 0.3 V ― 250 ― MHz ― ...
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... RN4990 2001-06-07 ...
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... RN4990 2001-06-07 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 RN4990 000707EAA 2001-06-07 ...