BSM150GB170DN2E3166 Siemens (acquired by Infineon Technologies Corporation), BSM150GB170DN2E3166 Datasheet - Page 8

• Manufacturer Part Number: BSM150GB170DN2E3166
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Enlarged Diode Area )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Forward characteristics of fast recovery
reverse diode
Semiconductor Group
parameter: T
I
F
300
260
240
220
200
180
160
140
120
100
80
60
40
20
A
0
0.0
0.5
j
I
F
1.0
= f(V
1.5
F
T
)
j
=125°C
2.0
2.5
T
j
=25°C
V
V
F
3.5
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
10
= ( t
-1
-2
-3
-4
-5
0
10
-5
p
)
single pulse
BSM150GB170DN2 E3166
10
p
-4
/ T
10
-3
10
-2
Diode
D = 0.50
10
Aug-01-1996
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0