MCP6569 Microchip Technology, MCP6569 Datasheet - Page 4

• Manufacturer Part Number: MCP6569
• Description: (MCP6566 - MCP6569) 1.8V Low Power Open-Drain Output Comparator
• Manufacturer: Microchip Technology

w w w . D a t a S h e e t 4 U . c o m
MCP6566/6R/6U/7/9
DC CHARACTERISTICS (CONTINUED)
AC CHARACTERISTICS
TEMPERATURE SPECIFICATIONS
DS22143B-page 4
Electrical Characteristics: Unless otherwise indicated: V
and R
Push-Pull Output
Pull-up Voltage
High Level Output Voltage
High Level Output Current leakage
Low Level Output Voltage
Short Circuit Current (Notes 3)
Output Pin Capacitance
Note 1:
Electrical Characteristics: Unless otherwise indicated,: Unless otherwise indicated,: V
T
Propagation Delay
High-to-Low,100 mV Overdrive
Output
Fall Time
Maximum Toggle Frequency
Input Voltage Noise
Note 1:
Electrical Characteristics: Unless otherwise indicated: V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, SC70-5
Thermal Resistance, SOT-23-5
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
A
= +25°C, V
Pull-Up
2:
3:
4:
2:
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
V
Limit the output current to Absolute Maximum Rating of 50 mA.
The pull up voltage for the open drain output V
case, I
ENI is based on SPICE simulation.
Rise time t
= 20 kΩ to V
Parameters
HYST
IN+
Parameters
Parameters
= V
OH_leak
at different temperatures is estimated using V
DD
R
/2, V
and t
PU
can be higher than 1 µA (see
= V
IN-
PLH
DD
= V
depend on the load (R
(see
SS
, R
Figure
V
Pull-Up
Symbol
I
PULL_UP
OH_leak
C
V
V
I
OUT
OH
SC
OL
1-1).
= 20 kΩ to V
Symbo
Symbo
θ
θ
θ
θ
θ
θ
t
T
T
T
E
PHL
f
TG
JA
JA
JA
JA
JA
JA
t
l
A
A
A
l
F
NI
Min
1.6
—
—
—
—
—
Figure
L
DD
and C
PULL_UP
PU
= +1.8V to +5.5V, V
Min
—
—
—
—
—
—
Min
= V
-40
-40
-65
2-30).
—
—
—
—
—
—
L
Typ
±30
HYST
—
—
—
—
). These specification are valid for the specified load only.
DD
8
DD
can be as high as the absolute maximum rating of 10.5V. In this
= +1.8V to +5.5V and V
, and C
Typ
(T
350
56
34
20
V
4
2
A
220.7
149.5
PULL_UP
95.3
) = V
Typ
331
100
211
Max
—
—
—
5.5
0.6
—
—
1
L
HYST @ +25°C
= 25 pf (see
Max
80
80
—
—
—
—
SS
+125
+125
+150
= GND, T
Max
Units
—
—
—
—
—
—
mA
µA
pF
V
V
V
Units
µV
DD
MHz
MHz
ns
ns
ns
P
= +1.8V to +5.5V, V
Figure
-
P
+ (T
(see
Note 4
I
Not to exceed Absolute Max. Rating
A
OUT
Units
°C/W
°C/W
= +25°C, V
°C/W
°C/W
°C/W
°C/W
A
V
V
V
V
10 Hz to 10 MHz (Note 1)
SS
°C
°C
°C
CM
CM
DD
DD
Figure
© 2009 Microchip Technology Inc.
= 3 mA/8 mA @ V
- 25°C) TC
1-1).
= GND.
= V
= V
= 5.5V
= 1.8V
DD
DD
1-1) (Notes 3, 4)
IN
Conditions
/2, V
/2, V
Conditions
+ = V
1
+ (T
SS
DD
DD
Conditions
= GND,
DD
A
= 1.8V
= 5.5V
DD
- 25°C)
/2, V
= 1.8V/5.5V
IN
- = V
2
TC
SS
2
.
,