Q60215-Y1111 Siemens (acquired by Infineon Technologies Corporation), Q60215-Y1111 Datasheet - Page 3

• Manufacturer Part Number: Q60215-Y1111
• Description: Npn-silizium-fototransistor Silicon NPN Phototransistor
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Kennwerte (
Characteristics
Bezeichnung
Description
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Abstand Chipoberfläche zu Gehäuseober-
fläche
Distance chip front to case surface
Halbwinkel
Half angle
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
E
E
V
Kapazität
Capacitance
V
V
V
Dunkelstrom
Dark current
V
Semiconductor Group
e
v
CB
CE
CB
EB
CE
= 10 % von
= 10 % of
= 0.5 mW/cm
= 1000 Ix, Normlicht/standard light A,
= 5 V
= 0 V,
= 0 V,
= 0 V,
= 35 V,
f
f
f
= 1 MHz,
E
= 1 MHz,
= 1 MHz,
S
T
max
= 0
A
S
max
= 25 C,
2
,
V
CB
E
E
E
= 5 V
= 0
= 0
= 0
= 950 nm)
240
Symbol
Symbol
A
L B
L W
H
I
I
C
C
C
I
PCB
PCB
CEO
S max
CE
CB
EB
Wert
Value
850
420 ... 1130
0.12
0.5
2.4 ... 3.0
4.5
17
8
11
19
5 ( 100)
8
0.5
Einheit
Unit
nm
nm
mm
mm
mm
Grad
deg.
pF
pF
pF
nA
A
A
2
mm
BPY 62