DMN4027SSD Diodes, DMN4027SSD Datasheet - Page 4

• Manufacturer Part Number: DMN4027SSD
• Description: 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Diodes

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Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Notes:
DMN4027SSD
Document Number DS31204 Rev 1 - 2
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
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Min
4 of 8
1.0
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.017
0.031
22.8
0.85
12.1
59.6
12.9
15.4
Typ
604
106
5.1
6.3
2.4
3.3
3.1
3.1
7.5
⎯
⎯
⎯
⎯
0.027
0.047
±100
Max
0.5
3.0
1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f= 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= 250μA, V
= 7A, V
= 2.1, di/dt= 100A/μs
= 1A, R
= 250μA, V
= 40V, V
= 15V, I
= 20V, V
= 20V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 4.5V
= 10V
Test Condition
GS
G
DMN4027SSD
≅ 6.0Ω
D
= 0V
D
D
GS
GS
GS
= 7A
= 7A
DS
GS
= 6A
DS
= 0V
= 0V
= 10V
= V
= 0V
= 0V
V
I
© Diodes Incorporated
D
GS
DS
= 7A
= 20V
March 2010