BD239D Power Innovations, BD239D Datasheet

BD239D

Manufacturer Part Number

BD239D

Description

NPN Silicon Power Transistors

Manufacturer

Power Innovations

Datasheet

1.BD239D.pdf (5 pages)

Current page: 1 of 5
Download datasheet (109Kb)

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for t

SEPTEMBER 1981 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Collector-emitter voltage (R

Collector-emitter voltage (I

Emitter-base voltage

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

●

R O D U C T

30 W at 25°C Case Temperature

2 A Continuous Collector Current

4 A Peak Collector Current

Customer-Specified Selections Available

2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

BE(off)

= 0, R

= 0.1 , V

I N F O R M A T I O N

= 0)

= 100 )

0.3 ms, duty cycle

= 20 V.

RATING

10%.

Pin 2 is in electrical contact with the mounting base.

NPN SILICON POWER TRANSISTORS

BD239D

BD239E

BD239F

BD239D

BD239E

BD239F

TO-220 PACKAGE

(TOP VIEW)

BD239D, BD239E, BD239F

SYMBOL

½LI

CER

CEO

EBO

stg

tot

B(on)

= 0.4 A, R

-65 to +150

VALUE

160

180

200

120

140

160

250

0.6

= 100 ,

MDTRACA

UNIT

°C

Related parts for BD239D

Related keywords

BD239D datasheet
BD239D data sheet
BD239D pdf datasheet
BD239D component
BD239D part
BD239D distributor
BD239D RoHS
BD239D datasheet download