LM185H-1.2/883 National Semiconductor, LM185H-1.2/883 Datasheet - Page 4

• Manufacturer Part Number: LM185H-1.2/883
• Description: Micropower Voltage Reference Diode
• Manufacturer: National Semiconductor

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Note 4: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at T
Note 5: Guaranteed and 100% production tested.
Note 6: Guaranteed, but not 100% production tested. These limits are not used to calculate average outgoing quality levels.
Note 7: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T
and T
Note 8: A military RETS electrical specification is available on request.
Typical Performance Characteristics
MIN
θ
θ
, divided by T
JA
JC
(junction to ambient)
(junction to case)
Thermal Resistance
Reverse Dynamic Impedance
MAX
Reverse Characteristics
Forward Characteristics
− T
MIN
. The measured temperatures are −55˚C, −40˚C, 0˚C, 25˚C, 70˚C, 85˚C, 125˚C.
00551813
00551815
00551817
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170˚C/W (0.125" leads)
180˚C/W (0.4" leads)
TO-92
N/A
4
Reverse Dynamic Impedance
440˚C/W
80˚C/W
TO-46
Reverse Characteristics
Temperature Drift of 3
Representative Units
A
= T
J
= 25˚C.
165˚C/W
SO-8
N/A
00551818
283˚C/W
00551814
00551816
SOT23
N/A
MAX