ADP3110A ON Semiconductor, ADP3110A Datasheet - Page 3

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ADP3110A

Manufacturer Part Number
ADP3110A
Description
12V MOSFET Driver
Manufacturer
ON Semiconductor
Datasheet

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Internally limited by thermal shutdown, 150°C min.
2. 2 layer board, 1 in
3. 60−180 seconds minimum above 237°C.
NOTE:
NOTE:
MAXIMUM RATINGS
MAXIMUM RATINGS
Operating Ambient Temperature, T
Operating Junction Temperature, T
Package Thermal Resistance: SO−8
Package Thermal Resistance: DFN8 (Note 2)
Storage Temperature Range, T
Lead Temperature Soldering (10 sec): Reflow (SMD styles only)
JEDEC Moisture Sensitivity Level
Junction−to−Case, R
Junction−to−Ambient, R
Junction−to−Case, R
Junction−to−Ambient, R
Pin Symbol
This device is ESD sensitive. Use standard ESD precautions when handling.
All voltages are with respect to PGND except where noted.
PGND
DRVH
DRVL
BST
V
SW
OD
IN
CC
2
Cu, 1 oz thickness.
qJC
qJC
qJA
qJA
(From die to exposed pad)
(2−Layer Board)
S
Bootstrap Supply Voltage Input
DRVH and DRVL Control Input
Main Supply Voltage Input
(Bootstrap Supply Return)
A
J
High−Side Driver Output
Low−Side Driver Output
(Note 1)
Switching Node
Output Disable
Pin Name
Ground
Rating
http://onsemi.com
3
40 V < 50 ns wrt/PGND
35 V wrt/PGND
40 V < 50 ns
15 V wrt/SW
BST + 0.3 V
V
CC
SO−8 (260 peak profile)
V
6.5 V
6.5 V
15 V
35 V
0 V
MAX
+ 0.3 V
Pb−Free (Note 3)
− 2.0 V < 200 ns wrt/SW
−5.0 V < 200 ns
−10 V < 200 ns
−65 to 150
−0.3 V wrt/SW
−0.3 V wrt/SW
260 peak
0 to 150
0 to 85
−0.3 V DC
Value
123
7.5
45
55
−0.3 V
−5.0 V
−0.3 V
−0.3 V
1
V
0 V
MIN
°C/W
°C/W
°C/W
°C/W
Unit
°C
°C
°C
°C

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