LM385B ON Semiconductor, LM385B Datasheet - Page 3

• Manufacturer Part Number: LM385B
• Description: Micropower Voltage Reference Diodes
• Manufacturer: ON Semiconductor

2. T
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage Change with Current
Reverse Dynamic Impedance
Average Temperature Coefficient
Wideband Noise (RMS)
Long Term Stability
T
T
T
I
1.0 mA v I
I
20 mA v I
I
I
low
high
low
high
Rmin
R
R
R
T
T
A
A
= 100 mA, T
= 100 mA, 10 Hz v f v 10 kHz
= 100 mA, T
= T
= T
v I
= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
low
low
R
R
v 1.0 mA, T
to T
to T
R
v 20 mA, T
v 20 mA, T
A
A
high
high
Characteristic
= +25°C
= +25°C ± 0.1°C
(Note 2)
(Note 2)
A
A
A
= +25°C
= T
= +25°C
low
to T
high
(T
A
(Note 2)
= 25°C, unless otherwise noted)
DV
Symbol
DV
LM285, LM385B
http://onsemi.com
(BR)
(BR)R
S
Z
n
/DT
3
Min
−
−
−
−
−
−
−
−
LM285−1.2
Typ
120
0.6
80
20
−
−
−
−
Max
1.0
1.5
10
20
−
−
−
−
LM385−1.2/LM385B−1.2
Min
−
−
−
−
−
−
−
−
Typ
120
0.6
80
20
−
−
−
−
Max
2.0
2.5
20
25
−
−
−
−
ppm/kHR
ppm/°C
Unit
mV
mV
W