LM389 National Semiconductor, LM389 Datasheet - Page 2

• Manufacturer Part Number: LM389
• Description: LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array
• Manufacturer: National Semiconductor

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AMPLIFIER
V
I
P
A
BW
THD
PSRR
R
I
TRANSISTORS
V
V
V
V
H
h
V
l
V
C
C
C
h
Q
BIAS
V
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
Package Dissipation (Note 1)
Input Voltage
Storage Temperature
Operating Temperature
Junction Temperature
Lead Temperature (Soldering 10 sec )
Collector to Emitter Voltage V
Electrical Characteristics
Note 1 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance
of 66 C W junction to ambient
Note 2 The collector of each transistor is isolated from the substrate by an integral diode Therefore the collector voltage should remain positive with respect to
pin 17 at all times
Note 3 If oscillation exists under some load conditions add 2 7
oe
fe
S
OUT
V
CEO
CBO
CIO
EBO
BE
CESAT
IN
FE
EB
CB
CI
BE1
Symbol
–V
BE2
l
Operating Supply Voltage
Quiescent Current
Output Power (Note 3)
Voltage Gain
Bandwidth
Total Harmonic Distortion
Power Supply Rejection Ratio
Input Resistance
Input Bias Current
Collector to Emitter
Breakdown Voltage
Collector to Base
Breakdown Voltage
Collector to Substrate
Breakdown Voltage
Emitter to Base
Breakdown Voltage
Static Forward Current
Transfer Ratio (Static Beta)
Open-Circuit Output Admittance
Base to Emitter Voltage
Base to Emitter Voltage Offset
Collector to Emitter
Saturation Voltage
Emitter to Base Capacitance
Collector to Base Capacitance
Collector to Substrate
Capacitance
High Frequency Current Gain
Parameter
CEO
b
T
65 C to
A
0 C to
e
25 C
a
V
THD
V
10 F from Pins 4 to 12
V
V
f
V
Pins 4 and 12 Open Referred to Output
V
I
I
I
I
I
I
I
I
I
I
I
V
V
V
I
a
C
C
C
E
C
C
C
C
E
E
C
C
and 0 05 F series network from pin 1 to ground
g
1 89W
S
S
S
S
e
S
S
EB
CB
CI
150 C
150 C
260 C
e
e
e
e
e
e
e
e
e
e
e
e
70 C
0 4V
e
e
e
e
e
e
15V
12V
e
1 kHz Pins 4 and 12 Open
e
e
e
10 A I
1 mA
1 mA
1 mA I
10 A I
10 A I
10 A
1 mA
10 mA
1 mA V
10 mA I
10 mA V
6V V
6V f
6V Pins 4 and 12 Open
6V R
6V f
6V Pins 5 and 16 Open
3V
3V
3V
10%
2
e
e
IN
L
B
E
E
C
CE
e
B
e
1 kHz
1 kHz C
e
CE
Conditions
e
e
e
Collector to Base Voltage V
Collector to Substrate Voltage V
Collector Current I
Emitter Current I
Base Current I
Power Dissipation (Each Transistor) T
Thermal Resistance
e
8
e
0V
0
(Note 2)
e
0
I
0
1 mA
B
JC
JA
5V f
V
V
P
5V f
e
S
S
OUT
BYPASS
0
e
e
e
e
6V R
9V R
e
1 0 kHz
100 MHz
125 mW
B
e
L
L
E
10 F
e
e
C
8
16
CBO
Min
250
100
6 4
1 5
23
30
10
12
15
15
4
CIO
A s
0 15
Typ
325
500
250
250
100
275
275
0 2
7 1
0 7
1 5
3 5
5 5
26
46
50
50
20
40
40
20
6
1
2
a
70 C 150 mW
Max
0 85
3 0
7 8
0 5
12
12
30
5
24 C W
70 C W
25 mA
25 mA
5 mA
Units
15V
15V
mW
mW
kHz
mA
mV
k
dB
dB
dB
nA
mho
pF
pF
pF
%
V
V
V
V
V
V
V