FLE21 White Electronic Designs Corporation, FLE21 Datasheet - Page 5

• Manufacturer Part Number: FLE21
• Description: Density = 8MB-64MB ;; Memory Device = Amd 29F032B ;; Organization = X16/x8 ;; Speed (ns) = 150,200 ;; Volt = 5
• Manufacturer: White Electronic Designs Corporation

PCMCIA Flash Memory Card
FLE Series
August 2000 Rev. 4 - ECO #13129
** Advanced information
DC Characteristics
Absolute Maximum Ratings
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to V
V
CMOS Test Conditions: V
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE
3. ICCS is specified for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.
4. Typical: V
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.
Sym
I
I
I
I
(CMOS)
CC
CCR
CCW
CCE
CCS
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
I
I
V
V
V
V
V
Symbol
LI
LO
supply Voltage relative to V
IL
IH
OL
OH
LKO
internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=V
CC
Parameter
V
V
V
V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Lock Voltage
CC
CC
CC
CC
= 5V, T = +25°C.
CC
Read Current
Program Current
Erase Current
Standby Current
Erase/Program
1
Parameter
#, CE
(1)
CC
2
#, OE#, WE#, REG#.
= 5V ± 5%, V
SS
SS
(2)
(Mbytes)
Density
64MB
8MB
All
All
All
-40°C to +85°C **
-40°C to +85°C **
-0.5V to V
-0.5V to +7.0V
-30°C to +80°C
Notes
IL
0°C to +60°C
1
1
1
1
1
1
1
= V
Notes
2,3
SS
± 0.2V, V
CC
V
0.7V
5
Min
+0.5V (1)
CC
2.0
Typ
40
30
30
0
100
-0.4
50
(5)
(6)
(6)
CC
(4)
IH
= V
40
40
Max
200
400
V
75
(6)
(6)
Max
CC
±20
±20
V
CC
0.8
0.4
+0.5
CC
Notes:
(1) During transitions, inputs may undershoot
to -2.0V or overshoot to V
less than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
± 0.2V
Units
mA
mA
mA
µA
Units
µA
µA
V
V
V
V
V
CC
Test Conditions
V
tcycle = 150ns,CMOS levels
V
Control Signals = V
Reset = V
due to internal pull-down resistor.
CC
CC
= V
= V
Vin =V
V
Vout =V
IOL = 3.2mA
IOH = -2.0mA
V
CC
CC
CC
CC
Test Conditions
= V
= V
SS
max
max
, CMOS levels
CC
CC
CC
CC
CC
or V
MAX
MAX
+2.0V for periods
or V
PC Card Products
SS
CC
SS