XR1004 Mimix Broadband, XR1004 Datasheet
![no-image](/images/no-image-200.jpg)
XR1004
Manufacturer Part Number
XR1004
Description
30.0-46.0 GHz GaAs MMIC Receiver
Manufacturer
Mimix Broadband
Datasheet
1.XR1004.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
XR1004-BD
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
XR1004-V
Manufacturer:
MIMIX
Quantity:
20 000
30.0-46.0 GHz GaAs MMIC
Receiver
Features
General Description
Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise
figure of 3.5 dB and 18.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO doubler and LO buffer
amplifer. The image reject mixer eliminates the need for a bandpass
filter after the LNA to remove thermal noise at the image frequency.
The use of integrated LO doubler and LO buffer amplifier makes the
provision of the LO easier than for fundamental mixers at these
frequencies. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband. This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
August 2007 - Rev 16-Aug-07
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
Sub-harmonic Receiver
Integrated LNA, LO Doubler/Buffer, Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Electrical Characteristics (Ambient Temperature T = 25
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 and +2.0 dBm.
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P
Image Rejection
Noise Figure (NF)
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Gate Bias Voltage (Vg4,5) Mixer, Doubler
Supply Current (Id1,2) (Vd1,2=4.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=4.0V,Vg=-0.3V Typical)
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
2
LO
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
)
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Parameter
their obligation to be compliant with U.S. Export Laws.
1,2
2
Chip Device Layout
Absolute Maximum Ratings
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Supply Voltage (Vd)
Supply Current (Id1,2), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Units
dBm
dBm
VDC
VDC
VDC
GHz
GHz
GHz
GHz
dBc
mA
mA
dB
dB
dB
dB
Min.
35.0
30.0
15.5
-1.2
-1.2
DC
-
-
-
-
-
-
-
-
-
-
40.0/40.0
Typ.
10.0
+2.0
18.0
+4.0
+4.0
-0.3
-0.5
145
9.0
3.5
50
-
-
-
-
o
+6.0 VDC
110, 180 mA
+0.3 VDC
-65 to +165
-55 to MTTF Table
MTTF Table
C)
+5 dBm
Max.
+5.5
+0.1
+0.1
46.0
46.0
25.0
100
165
4.0
R1004-BD
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-
-
-
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