SI7120DN Vishay Intertechnology, SI7120DN Datasheet - Page 3

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SI7120DN

Manufacturer Part Number
SI7120DN
Description
N-channel 60-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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Document Number: 72771
S-51128—Rev. D, 13-Jun-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
10.0
8.0
6.0
4.0
2.0
0.0
40
10
1
0.0
0.0
0.0
5.0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 10 A
0.2
On-Resistance vs. Drain Current
6.0
= 10 V
V
10.0
SD
V
Q
GS
g
I
− Source-to-Drain Voltage (V)
T
D
− Total Gate Charge (nC)
0.4
= 4.5 V
J
15.0
− Drain Current (A)
= 150_C
12.0
Gate Charge
20.0
0.6
18.0
25.0
0.8
V
30.0
GS
T
24.0
J
= 10 V
= 25_C
1.0
35.0
40.0
30.0
1.2
3000.0
2500.0
2000.0
1500.0
1000.0
500.0
0.10
0.08
0.06
0.04
0.02
0.00
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.0
−50
0.0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
−25
V
I
D
oss
10.0
GS
= 10 A
2.0
V
V
= 10 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
20.0
C
rss
25
Capacitance
4.0
Vishay Siliconix
30.0
C
50
iss
6.0
75
I
Si7120DN
40.0
D
= 10 A
100
www.vishay.com
8.0
50.0
125
10.0
60.0
150
3

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