SI7114ADN Vishay Intertechnology, SI7114ADN Datasheet

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SI7114ADN

Manufacturer Part Number
SI7114ADN
Description
N-channel 30-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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Part Number:
SI7114ADN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
850
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Part Number:
SI7114ADN-T1-GE3
Quantity:
30 000
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
70 000
Document Number: 68932
S-82616-Rev. B, 03-Nov-08
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Ordering Information: Si7114ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
3.30 mm
D
7
D
C
= 25 °C.
0.0098 at V
6
0.0075 at V
D
PowerPAK
Bottom View
5
R
http://www.vishay.com/ppg?73257
D
DS(on)
GS
GS
1
J
(Ω)
®
S
= 4.5 V
= 150 °C)
= 10 V
b, f
1212-8
2
S
N-Channel 30-V (D-S) MOSFET
3
S
3.30 mm
4
I
D
G
(A)
35
35
Steady State
a, g
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
10.2 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
AS
I
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• Synchronous Rectification
100 % UIS Tested
Typical
2.4
26
g
Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
14.5
3.2
3.7
2.4
Limit
18
± 20
35
260
35
30
60
30
45
32
39
25
b, c
b, c
b, c
b, c
g
b, c
g
D
S
Maximum
3.2
34
Vishay Siliconix
Si7114ADN
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
A
1

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