SI7476DP Vishay Intertechnology, SI7476DP Datasheet - Page 2

• Manufacturer Part Number: SI7476DP
• Description: N-channel 40-V (d-s) Fast Switching Mosfet
• Manufacturer: Vishay Intertechnology

Si7476DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0.0
b
Parameter
0.5
V
a
a
DS
V
GS
Output Characteristics
a
− Drain-to-Source Voltage (V)
= 10 thru 4 V
1.0
a
a
1.5
2.0
Symbol
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
= 25_C UNLESS OTHERWISE NOTED)
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
3 V
2.5
3.0
New Product
V
V
I
DS
D
DS
^ 1 A, V
I
= 20 V, V
F
V
= 40 V, V
V
V
V
V
V
V
V
V
DS
= 4.5 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
S
DS
GS
DD
DD
GS
DS
= 4.5 A, V
= 0 V, V
= V
w 5 V, V
= 40 V, V
= 10 V, I
= 20 V, R
= 20 V, R
= 4.5 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
= 10 V, I
D
GS
D
GS
GS
D
= 250 mA
D
L
L
= "20 V
= 25 A
= 23 A
= 20 W
= 20 W
= 25 A
= 10 V
= 0 V
= 0 V
J
D
g
= 55_C
60
50
40
30
20
10
= 25 A
= 6 W
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
1.0
40
1.5
T
C
2.0
0.0042
0.0053
= 125_C
25_C
Typ
0.76
21.2
118
130
1.0
85
25
30
22
55
45
S-40577—Rev. B, 29-Mar-04
Document Number: 72569
2.5
0.0053
0.0066
"100
Max
177
195
1.2
3.0
45
35
85
70
3
1
5
3.5
−55_C
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
4.0