Si7414DN Vishay Intertechnology, Si7414DN Datasheet - Page 2

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Si7414DN

Manufacturer Part Number
Si7414DN
Description
N-channel 60-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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Si7414DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
– Drain-to-Source Voltage (V)
a
V
GS
2
= 10 thru 5 V
a
a
3
Symbol
V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
R
Q
g
t
t
SD
t
rr
fs
gs
gd
r
G
f
g
4
_
4 V
3 V
_
5
New Product
V
V
I
DS
D
DS
^ 1 A, V
I
= 30 V, V
F
V
= 48 V, V
V
V
V
V
V
V
V
V
DS
= 3.2 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
GS
DS
S
DS
DD
DD
= 3.2 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 4.5 V, I
= 15 V, I
= 48 V, V
= 30 V, R
= 30 V, R
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
= 0 V, T
D
D
GS
GS
D
D
GS
L
L
= 250 mA
= "20 V
= 8.7 A
= 7.3 A
= 8.7 A
= 30 W
= 30 W
= 10 V
= 0 V
= 0 V
J
D
G
= 55_C
30
25
20
15
10
= 8.7 A
= 6 W
5
0
0
V
1
GS
Transfer Characteristics
– Gate-to-Source Voltage (V)
Min
30
1
25_C
2
T
C
= 125_C
0.021
0.030
Typ
0.75
2.7
4.4
1.0
18
16
15
12
30
12
45
S-04764—Rev. A, 08-Oct-01
Document Number: 71738
3
–55_C
Max
"100
0.025
0.036
1.2
25
25
20
50
20
90
1
5
4
Unit
nC
nA
m
mA
ns
W
W
W
V
A
S
V
5

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