Si7445DP Vishay Intertechnology, Si7445DP Datasheet - Page 3

• Manufacturer Part Number: Si7445DP
• Description: P-channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71626
S-31728—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
0.016
0.012
0.008
0.004
0.000
50
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
Source-Drain Diode Forward Voltage
D
DS
GS
= 19 A
0.2
On-Resistance vs. Drain Current
5
20
= 15 V
= 1.8 V
V
T
SD
Q
J
g
= 150_C
I
- Source-to-Drain Voltage (V)
10
D
- Total Gate Charge (nC)
0.4
- Drain Current (A)
Gate Charge
40
15
0.6
60
20
0.8
T
J
= 25_C
V
V
GS
GS
80
= 2.5 V
= 4.5 V
25
1.0
100
30
1.2
15000
12000
0.030
0.024
0.018
0.012
0.006
0.000
9000
6000
3000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 19 A
V
V
4
= 4.5 V
GS
DS
T
2
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
25
Capacitance
8
I
D
Vishay Siliconix
C
oss
= 19 A
50
4
C
iss
12
75
Si7445DP
100
6
www.vishay.com
16
125
150
20
8
3