Si7447DP Vishay Intertechnology, Si7447DP Datasheet - Page 2

• Manufacturer Part Number: Si7447DP
• Description: P-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7447DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0
b
Parameter
V
1
V
GS
a
a
DS
= 10 thru 5 V
Output Characteristics
a
- Drain-to-Source Voltage (V)
2
a
J
4 V
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
3 V
g
Q
R
t
SD
t
t
4
rr
fs
gs
gd
r
f
g
g
5
New Product
V
I
V
DS
D
DS
^ -1 A, V
= -15 V, V
I
F
= -24 V, V
V
V
V
V
V
V
V
= -2.9 A, di/dt = 100 A/ms
V
V
I
DS
DS
GS
DS
S
DS
DD
DD
Test Condition
DS
DS
= -2.9 A, V
= V
= -5 V, V
= -10 V, I
= -15 V, I
= -24 V, V
= -15 V, R
= -15 V, R
= 0 V, V
= 0 V, V
GEN
GS
GS
GS
, I
= -10 V, R
= -10 V, I
D
= 0 V, T
GS
GS
GS
= -250 mA
D
D
GS
GS
L
L
= -24 A
= "20 V
= "25 V
= -24 A
= -10 V
= 15 W
= 15 W
= 0 V
= 0 V
J
D
G
= 70_C
60
50
40
30
20
10
= -24 A
= 6 W
0
0.0
0.5
V
1.0
GS
Min
-1.0
-30
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.5
T
2.0
25_C
0.0047
C
-0.71
Typ
32.5
180
130
100
113
50
17
25
20
= 125_C
4
S-21475—Rev. A, 26-Aug-02
2.5
Document Number: 71970
3.0
"100
"200
Max
0.006
-3.0
-1.1
-10
170
270
200
150
-1
40
30
3.5
-55 _C
4.0
Unit
nA
m
mA
nC
ns
ns
V
A
W
S
V
W
4.5