Si7501DN Vishay Intertechnology, Si7501DN Datasheet - Page 3

• Manufacturer Part Number: Si7501DN
• Description: Complementary 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72173
S-32419—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.16
0.12
0.08
0.04
0.00
25
20
15
10
10
5
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 6.4 A
On-Resistance vs. Drain Current
= 15 V
1
V
5
3
DS
Q
Output Characteristics
g
V
− Drain-to-Source Voltage (V)
GS
I
D
− Total Gate Charge (nC)
− Drain Current (A)
= 6 V
Gate Charge
10
2
6
V
GS
= 10 thru 6 V
15
3
9
5 V
V
GS
20
12
4
= 10 V
4 V
3 V
25
15
5
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
0
5
0
−50
0
0
On-Resistance vs. Junction Temperature
V
I
D
−25
C
GS
= 6.4 A
rss
1
= 10 V
6
V
GS
T
V
0
J
Transfer Characteristics
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
2
25
Capacitance
12
C
iss
Vishay Siliconix
C
50
3
oss
T
25_C
18
C
75
= −55_C
Si7501DN
4
P−CHANNEL
100
24
www.vishay.com
125_C
5
125
150
30
6
3