SI7658ADP Vishay Intertechnology, SI7658ADP Datasheet - Page 4

• Manufacturer Part Number: SI7658ADP
• Description: N-channel 30-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si7658ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
- Temperature (°C)
25
0.6
50
I
D
= 250 µA
T
75
J
Limited by R
0.8
= 25 °C
0.01
100
0.1
10
1
0.01
100
I
* V
D
Safe Operating Area, Junction-to-Ambient
1.0
= 5 mA
125
DS(on)
GS
> minimum V
New Product
V
Single Pulse
*
0.1
DS
150
T
1.2
A
- Drain-to-Source Voltage (V)
= 25 °C
GS
at which R
1
0.010
0.008
0.006
0.004
0.002
0.000
BVDSS
Limited
DS(on)
200
160
120
80
40
10
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
100
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
T
0.1
5
J
S-81218-Rev. A, 02-Jun-08
= 25 °C
Document Number: 68640
6
7
1
T
J
8
= 125 °C
9
10
1
0