Si7804DN Vishay Intertechnology, Si7804DN Datasheet - Page 2

• Manufacturer Part Number: Si7804DN
• Description: N-channel 30-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Si7804DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
V
GS
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
= 10 thru 5 V
40
35
30
25
20
15
10
5
0
b
0
Parameter
a
a
1
V
DS
a
Output Characteristics
− Drain-to-Source Voltage (V)
a
a
2
4 V
3
Symbol
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
t
SD
t
3 V
rr
fs
gs
gd
r
f
g
g
4
New Product
5
V
V
I
D
DS
DS
^ 1 A, V
I
F
V
= 24 V, V
V
V
= 15 V, V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
V
I
DS
DS
Test Condition
S
DS
GS
DD
DD
DS
GS
= 2.9 A, V
= 0 V, V
= V
w 5 V, V
= 24 V, V
= 10 V, I
= 15 V, I
= 15 V, R
= 15 V, R
= 4.5 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
D
= 5 V, I
GS
D
GS
GS
D
L
L
= 250 mA
D
= "20 V
= 10 A
= 15 W
= 15 W
= 10 A
= 10 V
= 8 A
= 0 V
= 0 V
J
D
G
= 55_C
40
35
30
25
20
15
10
= 10 A
5
0
= 6 W
0.0
0.5
V
1.0
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
1.5
0.8
0.6
30
2.0
0.015
0.022
Typ
0.75
8.7
1.5
3.5
1.2
16
12
32
14
30
2.5
S-32411—Rev. B, 24-Nov-03
8
T
Document Number: 72317
25_C
C
= −55_C
3.0
0.0185
Max
"100
0.030
1.8
1.2
1.8
13
15
20
50
25
60
1
5
3.5
125_C
4.0
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
4.5