Si7810DN Vishay Intertechnology, Si7810DN Datasheet - Page 2

• Manufacturer Part Number: Si7810DN
• Description: N-channel 100-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7810DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
– Drain-to-Source Voltage (V)
a
V
GS
2
= 10 thru 7 V
a
a
3
Symbol
V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
t
SD
t
rr
fs
gs
gd
r
f
g
4
_
6 V
5 V
4 V
_
5
New Product
V
V
I
DS
D
DS
^ 1 A, V
I
= 50 V, V
F
V
= 80 V, V
V
V
V
V
V
V
V
DS
= 3.2 A, di/dt = 100 A/ms
V
I
DS
DS
Test Condition
GS
DS
S
DS
DD
DD
GS
= 3.2 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 15 V, I
= 80 V, V
= 50 V, R
= 50 V, R
= 6 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
= 0 V, T
D
D
D
GS
GS
D
GS
L
L
= 250 mA
= 4.6 A
= "20 V
= 5.4 A
= 5.4 A
= 50 W
= 50 W
= 10 V
= 0 V
= 0 V
J
D
G
= 55_C
20
16
12
= 5.4 A
= 6 W
8
4
0
0
1
V
GS
Transfer Characteristics
2
– Gate-to-Source Voltage (V)
Min
20
2
T
3
25_C
C
= 125_C
0.052
0.070
Typ
0.78
13.5
4.6
12
10
15
20
15
45
S-04559—Rev. A, 27-Aug-01
3
4
Document Number: 70689
Max
"100
0.062
0.084
5
1.2
17
15
25
30
25
90
1
5
–55_C
6
Unit
nC
nA
m
mA
ns
W
W
V
A
S
V
7