Si7846DP Vishay Intertechnology, Si7846DP Datasheet - Page 2

• Manufacturer Part Number: Si7846DP
• Description: N-channel 150-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7846DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
b
0
0
Parameter
a
a
2
V
DS
a
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
a
J
= 10 thru 7 V
4
= 25_C UNLESS OTHERWISE NOTED)
6 V
6
Symbol
V
r
I
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
5 V
rr
fs
gs
gd
r
f
g
g
8
3, 4 V
10
V
V
I
DS
D
DS
^ 5 A, V
I
= 120 V, V
F
V
V
V
V
= 75 V, V
V
V
DS
= 2.8 A, di/dt = 100 A/ms
V
V
I
DS
DS
DS
Test Condition
S
DD
DD
GS
DS
= 2.8 A, V
= 0 V, V
= V
= 120 V, V
w 5 V, V
= 75 V, R
= 75 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
D
= 0 V, T
= 10 V, I
GS
GS
D
L
L
= 250 mA
GS
= "20 V
D
= 5 A
= 15 W
= 15 W
= 10 V
= 0 V
= 5 A
= 0 V
50
40
30
20
10
J
G
D
0
= 55_C
= 6 W
= 5 A
0
1
V
GS
Transfer Characteristics
2
- Gate-to-Source Voltage (V)
Min
2.0
0.2
50
3
T
C
25_C
0.041
= 125_C
Typ
0.75
0.85
8.5
8.5
18
30
12
22
10
40
S-31728—Rev. B, 18-Aug-03
7
4
Document Number: 71442
5
Max
"100
0.050
1.1
1.4
36
18
11
33
15
70
1
5
- 55_C
6
Unit
nC
nA
mA
mA
ns
W
W
V
A
S
V
7